pi electron
英 [paɪ ɪˈlektrɒn]
美 [paɪ ɪˈlektrɑːn]
网络 电子
双语例句
- So pi bonds have electron density both above and below the bond axis, but they actually have a nodal plane at this z, this bond axis here.
键在键轴之上，和之下都有电子密度，但它们在z方向有节面，这是键轴的地方。 - We can make some substitutions here using some of the derivation on the previous board which will give us the Planck constant divided by2 pi mass of the electron times the Bohr radius.
在这里我们也可以，用我以前在黑板上写过的一些词来取代它，得到的是普朗克常数除以2π电子质量，再乘以波尔半径。 - Square of the Planck constant times pi mass of the electron.
普朗克常量的平方，乘以π再乘电子的质量。 - So if I try to rotate my2 atoms, you see that I have to break that pi bond, because they need to be lined up so that the electron density can overlap.
如果我要试着转动两个原子，你会看到我必须要打破一个π键，因为他们需要连接起来，让那些电子能够重叠。 - Methods 3H-thymidine incorporation, annexin-V/ propidium iodide double-labeled flow cytometry ( FCM) and transmission electron microscopy were employed to estimate the influence of RGDS on the proliferation and apoptosis of HSCs.
方法应用体外HSC培养技术，采用~3H-胸腺嘧啶核苷（~3H-TdR）掺入法测定HSC增殖；膜联蛋白（Annexin&V）/碘化丙啶（PI）双标记流式细胞术及透射电镜等方法测定HSC凋亡； - Methods: Brdu-ELISA, Annexin V/ PI binding, Real-time fluorescent quantitative RT-PCR, FACS, Electron microscope, Immunocytochemistry and Western blot analysis were applied in present study.
方法应用的技术包括BrdU-ELISA、AnnexinV／PI染色、透射电镜、实时荧光定量RT-PCR、流式细胞术、免疫细胞化学和westernblot等。 - In this paper, the polyimide/ silicon carbide ( PI/ SiC) nanocomposites for electronic assembly were synthesized using Sol-Gel method and characterized using scanning electron microscope ( SEM), Transmission electron microscope ( TEM), Fourier transform infrared spectroscopy ( FTIR).
通过熔胶-凝胶方法合成了用于电子封装的聚酰亚胺PI/SiC复合薄膜介电材料，并通过扫描电镜、透射电镜、红外光谱对复合薄膜进行结构表征。 - Apoptosis was assessed by flow cytometric DNA analysis, FITC Annexin ⅴ binding/ PI staining and electron microscopy.
流式细胞仪DNA分析、FITC-AnnexinⅤbinding/PI染色以及电镜扫描检测细胞凋亡。 - METHODS: The proliferation of HSCs was examined by direct cell count and the apoptosis was determined by Annexin-V/ PI labeling, while the morphological change was observed by light microscopy and transmission electron microscopy.
方法：通过直接细胞计数法测定HSCs增殖；光学显微镜及透射电镜技术观察凋亡细胞的形态学改变，并应用膜联蛋白（Annexin-V）/碘化丙啶（PI）联合标记法检测HSCs的凋亡率； - The effect of high-energy electron beam radiation to electrical parameters of polyimide ( PI) was studied.
研究了高能电子束辐照对聚酰亚胺薄膜（PI）试样电气性能的影响。 - Detect apoptosis of the macrophages by Annexin V-FITC/ PI double staining method; analyze apoptosis rates by flow cytometry ( 2) Detect morphological change and the mitochondria impairment by transmission electron microscopy of leptospiral induced apoptotic macrophages.
采用AnnexinV-FITC和PI双染法，通过流式细胞仪检测钩体感染后巨噬细胞凋亡率。（2）透射电镜观察诱导凋亡的巨噬细胞超微结构改变，尤其是线粒体改变。